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SK hynix Boosts Memory Production with Infinitesima's Metron3D System

SK hynix stays ahead with Infinitesima's Metron3D. The advanced system's precision and automation enhance production capabilities for next-gen memory.

In this image, we can see a mechanical tool on the surface. Background there is a blur view.
In this image, we can see a mechanical tool on the surface. Background there is a blur view.

SK hynix Boosts Memory Production with Infinitesima's Metron3D System

SK hynix, a global leader in semiconductor memory solutions, has invested in Infinitesima's Metron3D system, underscoring its commitment to staying at the forefront of computer memory development and manufacturing.

The Metron3D, a 300mm in-line wafer metrology system, has been adopted by SK hynix for volume production. This advanced system offers fully automated wafer, data, and probe handling, making it ideal for high-volume semiconductor device production.

At the heart of the Metron3D lies Infinitesima's patented RPM technology, enabling high-speed metrology with sub-nanometre 3D process control. This precision is vital for SK hynix's next-generation memory devices, which demand exceptional accuracy.

The system's capabilities have been rigorously tested and evaluated across multiple process steps before being approved for volume production. Mr. Young-Hyun Choi, Head of DMI at SK hynix, commended the Metron3D's sub-nanometre 3D metrology capabilities and cost-effectiveness for high-volume manufacturing (HVM) implementation.

Dr. Jon Utley, President and CEO of Infinitesima Limited, and Peter Jenkins, Infinitesima's President & CEO, both expressed satisfaction with the collaboration. Jenkins attributed the rapid qualification and deployment of the Metron3D system in HVM to SK hynix's support.

SK hynix's investment in the Metron3D system signals its dedication to technological leadership in memory development. The system's advanced features and precision metrology will enhance SK hynix's production capabilities, driving innovation in next-generation memory devices.

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