Dow Inc. Unveils Revolutionary Silicon Gel for Next-Gen IGBT Modules
Dow Inc., a Michigan-based materials science company, has unveiled Dow Jones EG-4175, a revolutionary silicon gel designed for next-generation insulated gate bipolar transistor (IGBT) modules. This innovative gel, capable of withstanding temperatures up to 180°C, promises enhanced performance in various applications, including solar inverter systems, wind turbines, and electric vehicle batteries.
Dow Jones EG-4175 is not just about heat resistance. It absorbs vibrations, providing an additional layer of protection for devices. Moreover, it possesses self-healing properties, allowing it to repair minor cracks without external intervention. This unique gel enables higher-density IGBT modules, leading to greater power system efficiency.
The gel's self-priming adhesion ensures enhanced module protection. Notably, it can cure at room temperatures, simplifying the manufacturing process. Dow Inc. is upgrading its IGBT materials portfolio to meet the growing demand for higher power densities in devices, with Dow Jones EG-4175 at the forefront of this innovation.
Dow Inc.'s Dow Jones EG-4175, with its heat resistance, vibration absorption, self-healing properties, and room temperature curing, is set to revolutionise IGBT modules. Its potential to enable higher voltages in devices like solar inverters, wind turbines, and EV batteries, while enhancing performance, makes it a significant development in materials science.
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